Investigation of the ion scattering process from the A3B5 semiconductors by the computer simulation method

Authors

  • Kutliev U Physics department, Urganch State University,Uzbekistan
  • Karimov M Physics department, Urganch State University,Uzbekistan
  • Sadullaeva B Physics department, Urganch State University,Uzbekistan
  • Otaboev M Physics department, Urganch State University,Uzbekistan

Keywords:

computer simulation, ion scattering, semiconductors, binary collision approximation

Abstract

Scattering of Ar+ ions from InP(001) at the grazing incidence was studied by the binary collision approximation method. The energy and angular distributions was obtained. At the energy distribution observed few peaks corresponding to the ions scattered from atomic chains and semichannels. Received results are interested at the study of semiconductor surfaces.

References

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Published

2024-02-26

How to Cite

Kutliev, U., Karimov, M., Sadullaeva, B., & Otaboev, M. (2024). Investigation of the ion scattering process from the A3B5 semiconductors by the computer simulation method. COMPUSOFT: An International Journal of Advanced Computer Technology, 7(04), 2749–2751. Retrieved from https://ijact.in/index.php/j/article/view/431

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Section

Original Research Article

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